Stacked One‐Selector‐One‐Resistive Memory Crossbar Array With High Nonlinearity and On‐Current Density for the Neuromorphic Applications (Adv. Electron. Mater. 12/2022)

Resistive Switching Memory The RuO2 electrode is used to suppress the selector degradation during switching operation. one selector-one resistive memory (1S1R) array using with superior performance fabricated implement a hardware neural network. 1S1R effectively sneak current through high nonlinearity of selector. Three simple alphabets, “L”, “I”, and “X” are classified array, proposed device shows possibilities for neuromorphic applications. More details can be found in article number 2200656 by Cheol Seong Hwang co-workers.